Features
? Fast Read Access Time – 70 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
? Fast Write Cycle Times
– Page Write Cycle Time: 2 ms Maximum (Standard)
– 1 to 64-byte Page Write Operation
?
Low Power Dissipation
– 40 mA Active Current
– 100 μA CMOS Standby Current
64K (8K x 8)
?
?
?
?
?
?
?
?
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
Single 5 V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Only
High Speed
Parallel
EEPROM with
Page Write and
Software Data
Protection
1. Description
The AT28HC64BF is a high-performance electrically-erasable and programmable
read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8
AT28HC64BF
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 55 ns with power dissipation of just 220 mW. When the device
is deselected, the CMOS standby current is less than 100 μA.
The AT28HC64BF is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a
new access for a read or write can begin.
Atmel’s AT28HC64BF has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an
extra 64 bytes of EEPROM for device identification or tracking.
3648B–PEEPR–4/09
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相关代理商/技术参数
AT28HC64BF-12JU SL383 制造商:Atmel Corporation 功能描述:EEPROM Parallel 64K-Bit 8K x 8 5V 32-Pin PLCC T/R 制造商:Atmel Corporation 功能描述:, 1M (128K X 8), 5V, SDP - 120NS, PLCC, IND TEMP, GREEN PKG - Tape and Reel
AT28HC64BF-12JU-T 功能描述:IC EEPROM 64KBIT 120NS 32PLCC 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb (8K x 8) 写周期时间 - 字,页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:32-LCC(J 形引线) 供应商器件封装:32-PLCC(11.43x13.97) 标准包装:1
AT28HC64BF-12PU 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28HC64BF-12SU 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28HC64BF-12SU SL383 制造商:Atmel Corporation 功能描述:PARALLEL EEPROM, 64K (8K X 8), 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 64KBIT 8KX8 5V 28SOIC W - Tape and Reel
AT28HC64BF-12SU-T 功能描述:120NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:64Kb (8K x 8) 写周期时间 - 字,页:10ms 访问时间:120ns 存储器接口:并联 电压 - 电源:4.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C(TC) 安装类型:表面贴装 封装/外壳:28-SOIC(0.295",7.50mm 宽) 供应商器件封装:28-SOIC 标准包装:1
AT28HC64BF-12TU 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
AT28HC64BF-70JU 功能描述:电可擦除可编程只读存储器 1M 5V SDP - 70NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8